super323 ?? sot323 npn silicon power (switching) transistor issue 2 - december 2008 fea tur es * 500mw power dissipation *i c cont 1a * 2a peak pulse current * excellent h fe characteristics up to 2a (pulsed) * extremely low equivalent on resistance; r ce(sat) applications * lcd backlighting inverter circuits * boost functions in dc-dc converters device type complement partmarking r ce(sat) ZUMT619 zumt720 t63 160m w at 1a absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 50 v emitter-base voltage v ebo 5v peak pulse current** i cm 2a continuous collector current i c 1.0 a base current i b 200 ma power dissipation at t amb =25c p tot 385 ? 500 ? mw operating and storage temperature range t j :t stg -55 to +150 c ? recommended p tot calculated using fr4 measuring 10 x 8 x 0.6mm (still air). ? maximum power dissipation is calculated assuming that the device is mounted on fr4 size 25x25x0.6mm and using comparable measurement methods adopted by other suppliers. ZUMT619
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. typ. max. unit conditions. collector-base breakdown voltage v (br)cbo 50 v i c = 100 ma collector-emitter breakdown voltage v (br)ceo 50 v i c = 10ma* emitter-base breakdown voltage v (br)ebo 5v i e = 100 ma collector cut-off current i cbo 10 na v cb = 40v emitter cut-off current i ebo 10 na v eb = 4v collector emitter cut-off current i ces 10 na v ces = 40v collector-emitter saturation voltage v ce(sat) 24 60 120 160 35 80 200 270 mv mv mv mv i c = 100ma, i b = 10ma* i c = 250ma, i b = 10ma* i c = 500ma, i b = 10ma* i c = 1a, i b = 50ma* base-emitter saturation voltage v be(sat) 940 1100 mv i c = 1a, i b = 50ma* base-emitter turn-on voltage v be(on) 850 1100 mv i c = 1a, v ce = 2v* static forward current transfer ratio h fe 200 300 200 75 20 420 450 350 130 60 i c =10ma, v ce = 2v* i c = 100ma, v ce =2 v* i c = 500ma, v ce =2v* i c = 1a, v ce = 2v* i c = 1.5a, v ce =2 v* transition frequency f t 215 mhz i c = 50ma, v ce =10v f= 100mhz output capacitance c obo 6 pf v cb = 10v, f=1mhz turn- on time t (on) 150 ns v cc =10 v, i c = 1a i b1 =i b2 =100ma turn-off time t (off) 425 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% ZUMT619
ZUMT619 1m 1m 1m 100m 100 1m 1m i c - collector current (a) v ce(sat) v i c 0 v ce(sat) - (v) ic/ib=10 ic/ib=50 ic/ib=100 +25c -55c h fe - typical gain +100c 0 i c - collector current (a) h fe v i c v be(on) - (v) 0 i c - collector current (a) v be(on) v i c +100c +150c v ce(sat) - (v) +25c 0 i c - collector current (a) v ce(sat) v i c +100c +150c v be(sat) - (v) +25c 0 i c - collector current (a) v be(sat) v i c 1s 100ms i c - collector current (a) 10 dc 10m v ce - collector emitter voltage (v) safe operating area 10ms 1ms 100s +25c -55c ic/ib=50 vce=2v -55c ic/ib=50 +25c +150c +100c -55c 10m 100m 1 10 0.1 0.2 0.3 0.4 0.1 0.2 0.3 0.4 10m 100m 1 10 10m 100m 1 10 10m 100m 1 10 10m 100m 1 10 200 400 600 800 0.2 0.4 0.6 0.8 1.0 0.3 0.6 0.9 1.15 11 0 100m 1 typical characteristics
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